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RF Power amplifier often demands Zero-defect in application. However, it sees non-uniform stress during application. The time depend stress level depends on the input signals. This paper presents a way to predict the gate oxide lifetime, not only for the intrinsic oxide breakdown, but also for the extrinsic oxide breakdown. An appropriate gate oxide screening condition would enable the desired quality...
This work analyzes the effect of stress parameter (i.e. E-field) correction on accurate reliability projections of SiO2 based gate dielectrics. Considered are oxide thicknesses in the non-ballistic FN dominated range, only. Irrespective of which underlying dielectric degradation mechanism is actually responsible for failure, here, an empirical approach is chosen that focuses on the stress, test and...
Reliability study of high-κ (HK) gate dielectric based transistors has become imperative for the current and future CMOS technology nodes as the industry shifts towards replacement of conventional silicon oxynitride (SiON) with hafnium-based oxides. One of the key requirements of any oxide reliability study is a quantitative assessment of the time dependent dielectric breakdown (TDDB) lifetime using...
Time Dependent Dielectric Breakdown (TDDB) in p-FETs with HfSiON/SiO2 gate stacks under negative bias stress has been studied. It is shown that the shape parameter of Weibull distribution of Tbd, β, is very small value independent of gate electrode materials. This small β seems to arise from the interface layer (I.L.) breakdown. Further experimental result reveals the existence of additional interface...
A new and accurate approach to gate oxide reliability measurements for the determination of the gate oxide quality and lifetime estimation on MOSFET is presented. An accurate gate oxide thickness calculation by gate current provides oxide thickness variations better than conventional CV measurement. A gate oxide quality by gate current analysis is well correlated to the time dependent dielectric breakdown...
The key methods used to convert ramped voltage test (RVT) data to long term reliability measurement data are reviewed. During the last years the discussion to replace time consuming constant voltage stress (CVS) tests with ramp testing was pushed forward, mainly due to time constraints during qualification of high-k and also low-k material as well as through results obtained for ultrathin oxides [1]...
Reliabilities of high-k stacked gate dielectrics are discussed from the viewpoint of the impact of initial traps in high-k layer. TDDB reliability can be explained by the generated subordinate carrier injection (GSCI) model. While initial traps increase the leakage current, they do not degrade the TDDB reliability. In contrast, the BTI reliability is strongly degraded by initial traps.
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