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In this work, a deep submicron double-gate (DG) Gallium Nitride (GaN)-MESFET design and its 2-D threshold analytical model have been proposed and expected to suppress the short-channel-effects for deep submicron GaN-MESFET-based low power applications. The model predicts that the threshold voltage is greatly improved in comparison with the conventional Single-Gate GaN-MESFET. The developed approaches...
In this paper, we presented a new analytical model for the transconductance and output conductance of submicron gate-length GaAs MESFET transistors. After an analytical study of the current voltage characteristics, the transconductance and drain conductance mathematical expressions are determined as a function of the drain and gate voltages in different operations regimes (linear, non-linear and saturated)...
A new two-dimensional analytical model for the potential distribution and depletion-layer width for the short-gate GaAs MESFET's has been presented in this paper. The solution of the two-dimensional Poisson's equation has been considered as the superposition of the solution of one-dimensional Poisson's equation in the lateral direction and the two-dimensional Laplace equation with suitable boundary...
An improved nonlinear current-voltage (I-V) characteristics model for nanometer range GaAs MESFETs has been developed. In this regard, Ahmed et al. model for submicron GaAs MESFETs has been modified. In this modification, the effects of both drain-to-source voltage, VDS, and gate-to-source voltage, VGS, on the output conductance, gd, have been incorporated. Moreover, the effect of VGS on the onset...
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