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We present in this paper an analytical model of the current-voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge build-up in the channel. We propose In this framework an algorithm of simulation based on mathematical...
In this paper, we presented a new analytical model for the transconductance and output conductance of submicron gate-length GaAs MESFET transistors. After an analytical study of the current voltage characteristics, the transconductance and drain conductance mathematical expressions are determined as a function of the drain and gate voltages in different operations regimes (linear, non-linear and saturated)...
From a computer-aided circuits analysis program, the nonlinear analysis of microwave GaAs field-effect transistors amplifier and the performance and the limitation of Normally-ON Logic gates using MESFET's are described.
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