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There is great interest in fabrication of semiconducting and piezoelectric nano-scale structures such as nanowires, nanorods and nanotubes. These find applications ranging from sensors to sub-micron electronic devices such as field effect transistors (FET), switches, memory elements, logic arrays and MEMS. In all of these diverse applications nanostructured zinc oxide (ZnO) materials attract broad...
Investigations on electron mobility characteristics in gate-all-around silicon nanowire nMOSFETs on (110)-oriented silicon-on-insulator substrates have been described on the basis of the advanced split capacitance-voltage (C- V) method. It is found that the electron mobility in [110]-directed nanowires approaches and is even higher than that in [100]-directed nanowires as the nanowire width is reduced...
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
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