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A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific on-resistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical...
In this work, we present a detailed investigation of the electrical characteristics of 3D Gate-All-Around (GAA) Silicon nanowire (down to 6nm-diameter) SONOS memories compared to standard planar SONOS devices. In particular, by means of TCAD simulations, the write, erase and retention characteristics under uniform FN stress are explained and the main geometrical and electrostatic effects of 3D cylindrical...
For the past 40 years, the scaling of CMOS device technology has enabled system performance to double every two years. However, emerging classes of applications for which network-speed processing and data-intensive modeling are integral components will demand a much faster rate of improvement, such as 2x/year in order to reach exaflop capabilities (100x-1000x over present systems) by the end of the...
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