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Three dimensional through-silicon via (3D TSV) technology emerges due to the requirement of high performance, low cost and small form factor in the three dimensional packaging technology. The typical TSV structure is a thin silicon wafer drilled with through hole, the inside wall of the hole is plated with dielectric SiO2 and diffusion barrier such as Ta, and then the hole is filled by Cu or W as...
3D integration is a key solution to the predicted performance problems of future ICs as well as it offers extreme miniaturization and cost-effective fabrication of More than Moore products (e.g. e-CUBESreg). Through silicon via (TSV) technologies enable high interconnect performance at relatively high fabrication cost compared to 3D packaging. A post backend-of-line TSV process is introduced as optimized...
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