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Net end-of-life aging prediction under realistic use conditions is the key objective for any product aging model. In this paper, a net degradation model is introduced and effects such as recovery, subsequent degradation, frequency, duty cycle, and recovery bias are evaluated. The high-kappa recovery behavior observed is consistent with SiO2 gate stacks, which allows the use of SiO2 models to predict...
In this paper we compare methods to determine the life-time of AlGaN/GaN HEMTs by accelerated DC life-tests. They all base on monitoring of both, IDSS and IDQ during the life-test, either at room temperature of at the elevated ambient temperature. The goal is to investigate whether interruptions of the life test to measure IDSS at room temperature can be prevented and replaced by screening this parameter...
NBTI is a serious reliability concern in state of the art PMOSFET devices. The implementation of nitrided gate oxides to prevent boron penetration has aggravated the NBTI issue. Because of relaxation effects careful stress and measurement techniques (ldquoOn-the-Flyrdquo) must be used for reliable estimation of device lifetime. This abstract describes a unique enhanced NBTI degradation phenomenon...
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