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A technique is described, to efficiently evaluate the reliability of an RF semiconductor device when several different mechanisms contribute simultaneously to its wearout. This is of interest for present-day GaN HEMT devices because symptoms of several simultaneous degradation mechanisms have been reported widely. The technique involves first finding DC parameters that are “signatures” of each mechanism...
This study reports on a reliability investigation of AlGaN/GaN HEMTs submitted to life tests in High Temperature Operating (HTO) conditions at 150°C, 175°C, 275°C and 320°C. These life tests showed two different degradation steps of the drain current. One is occurring in the first tens of hour of the life test and characterized by a decrease of the drain current. The evolution of the electrical characteristics...
The degradation mechanisms of 0.1 mum AlSb/InAs HEMTs subjected to elevated-temperature lifetesting at three temperatures in N2 atmosphere were investigated. Device degradation exhibits the increase of non-pinch-off drain current (IDS), the decrease of transconductance (gm) and the gate current (IG) increase. The IG increase was found to correlate with material degradation on the gate-recess and Al...
New failure mechanisms induced by hot-electrons in AlGaAs/InGaAs pseudomorphic HEMTs have been identified by means of accelerated testing of commercial devices from four different suppliers. Different degradation modes have been observed, depending on the device type, namely: (a) recoverable increase of I/sub D/ and |V/sub T/|, which has been attributed to recombination of electrons trapped under...
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