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This paper presents the underlying physics and modeling of aggressively biased cascode SiGe heterojunction bipolar transistor power amplifier (PA) cores under large-signal operating conditions. The damage characteristics observed during RF operation, particularly the base leakage and collector-base (CB) junction failure, are investigated in detail using dc stress methods. Base leakage was characterized...
We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3 temperature 48 V dc stress tests and using a failure criterion of 10% reduction in Idss, the 60% confidence interval on estimate of Ea was [2.00,2.94] eV and the predicted 60% confidence interval on estimate of MTTF at Tj=200 degC was [1.0 x 106, 3.0 x 107] hours. To compare the impact of dc and RF stress, additional...
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