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AlGaN/GaN HEMTs are tremendous interest in applications requiring high power at microwave frequencies. In the context of studying the reliability of RF High Power Amplifiers (HPA) in their real environment, a study of the effect of electromagnetic stress on AlGaN / GaN HEMTs performances is presented in this paper. The near field setup is used to disturb with electromagnetic field the device under...
High-voltage AlGaN/GaN HFETs can produce high RF output power with nearly ideal power-added efficiency. But widespread adoption of these HFETs has been limited by a lack of acceptable reliability data for practical communications and radar applications. Device problems that have been observed include dc current and RF output power degradation as a function of time when the device is operating. Sudden...
We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3 temperature 48 V dc stress tests and using a failure criterion of 10% reduction in Idss, the 60% confidence interval on estimate of Ea was [2.00,2.94] eV and the predicted 60% confidence interval on estimate of MTTF at Tj=200 degC was [1.0 x 106, 3.0 x 107] hours. To compare the impact of dc and RF stress, additional...
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