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Pregettering by phosphorus diffusion at temperatures between 800 and 1050 degrees C within the surface is shown to improve the electron diffusion length L/sub n/ in p-type polycrystalline silicon wafers. Provided the temperature is below 950 degrees C it is found that these treatments reduce the dislocation etch pit and the bulk recombination center densities in the material. Consequently, L/sub n/...
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