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CZTSSe thin-films were deposited by stacked sputtering methods (ZnS/SnS/Cu) and annealed with selenization. We adjusted the thickness of the ZnS precursor layer in CZT precursors. A 337 nm thickness of ZnS precursor was shown an efficiency of up to 9.1%. We investigated the secondary phases by Raman spectroscopy and Kelvin probe force microscopy with depth profiles. The Cu2SnSe3, ZnSe, and MoSe2 secondary...
ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of...
Spinel Zn2TiO4 nanostructures were obtained by the thermal oxidation method. Raman spectroscopy was used to investigate the local compositions of the cubic spinel Zn2TiO4 nanostructures. The Raman mode intensities of the spinel structure are present and correlate linearly with the TiO2 concentration. These modes are interpreted as local vibrational modes. In addition, the analysis of the E2(H) and...
Hollow-core photonic crystal fibers (HC-PCF) were employed for enhancing the Raman signal obtained from ZnO nanoparticles (NPs) in solution. By selectively filling the core of HC-PCF, substantial enhancement in the Raman signal was obtained. By employing this technique, four different stages in the synthesis ZnO NPs were studied with record low pump power levels. The concentration of ZnO NPs in the...
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