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In this work we investigated a new method of growing detector grade large GaTe layered chalcogenide single crystals. GaTe ingots (2" diameter) were grown by a novel method using graphite crucible by slow crystallization from a melt of high purity (7N) Ga and Te precursors in an argon atmosphere. GaTe samples from the monocrystalline area of the ingot have been cleaved mechanically and characterized...
Aluminum has been widely used in integrated circuit (IC) chip interconnect As the IC feature sizes continue to shrink, the RC delay of the interconnect wire has become the main delay of the system, instead of the intrinsic gate delay. For the higher speed responsibility, the resistance of the interconnects should be reduced. Copper interconnect has become the only one option for the semiconductor...
In-N co-doped P-type ZnO films were prepared on SiO2 and glass substrates by IBED method. The structural, optical and electrical properties were characterized by XRD, XPS, AFM and Hall test. The tests results show that the film was polycrystalline with a preferred (002) orientation. The resistivity, mobility and carrier concentration was 1.6times10-3 Omegamiddotcm, 35.9 cm2/VmiddotS and 1.66times10...
In this paper nanocrystalline thin films of TiO2 doped with Tb have been investigated. Thin films were deposited on different (silicon and glass) substrates using modified magnetron sputtering method named High Energy. Structural properties were examined by X-Ray Diffraction (XRD) method. The results have shown, that phase and average crystallites size of prepared thin films were determined by the...
The thermal stability and phase characteristics for the Ni-FUSI formed on SiO2 gate dielectrics by a novel integration process were investigated. The electrical resistivity and surface morphology of Ni/Si layers at varies of annealing temperatures were examined by X-ray diffraction (XRD), sheet resistance, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The structure of...
Transparent oxide semiconductors (TOSs) based on TiO2-doped matrix have been recently studied for their possible microelectronics applications. In the present work, TiO2 and Hf-doped TiO2 thin films were prepared by low pressure hot target reactive magnetron sputtering (LP HTRS) and deposited onto monocrystalline (100) silicon substrate. After deposition thin films were additionally annealed in air...
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