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Porous silicon films are currently under intense investigation for optical, photoelectric, thermal and electronic applications. In this work, the silica films have been prepared by a sol-gel process using a CTAB template. As an improvement, TiO2 was doped in silica sol to produce the TiO2-hybrid SiO2 Porous Film, and the hydrophobic activation of the film was carried out. The chemical and physical...
In-N co-doped P-type ZnO films were prepared on SiO2 and glass substrates by IBED method. The structural, optical and electrical properties were characterized by XRD, XPS, AFM and Hall test. The tests results show that the film was polycrystalline with a preferred (002) orientation. The resistivity, mobility and carrier concentration was 1.6times10-3 Omegamiddotcm, 35.9 cm2/VmiddotS and 1.66times10...
A novel route to prepare low-dielectric constant mesoporous SiO2 films is reported in this paper. Silicate sols are prepared with the precursor TEOS and template CTAB catalyzed by hydrochloric acid. The films are prepared by dip-coating process. FTIIR, XRD and AFM are used to characterize the films. The dielectric constants are measured by impedance analysis apparatus. The films with dielectric constants...
The thermal stability and phase characteristics for the Ni-FUSI formed on SiO2 gate dielectrics by a novel integration process were investigated. The electrical resistivity and surface morphology of Ni/Si layers at varies of annealing temperatures were examined by X-ray diffraction (XRD), sheet resistance, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The structure of...
In this paper, we describe the heteroepitaxial growth of single-crystal 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350degC for MEMS applications, in which hexamethyildisilane (HMDS, Si2(CH3)6) was used as a safe organosilane source. The HMDS flow rate was 0.5 seem and the H2 carrier gas flow rate was 2.5 slm. The HMDS...
In this paper, a method that combines radio frequency (RF) plasma with hot filament (HF) chemical vapor deposition (CVD) together has been used to prepare 3C-SiC film. The samples obtained through the above method have been systematically demonstrated by atom force microscopy (AFM), X-ray diffraction (XRD). Its concentration is measured to be p=1.33times1017cm-3 using Hall effect. The samples have...
In this paper, our work on heteroepitaxial SiC films deposited on single-crystalline (111) silicon by hot filament chemical vapor deposition (HFCVD) at low temperature of 800 degC is reported. The surface topography of SiC films on Si substrate were analyzed by atomic force microscope (AFM). The characteristics and crystallinity of the SiC film were examined by X-ray diffractometer (XRD) and Fourier...
The piezoelectric characteristics of ZnO films obtained by RF magnetron sputtering in reactive plasma have been researched. ZnO films have been grown on SiO/sub 2//Si (100) substrate using a zinc oxide target. Different RF power and reactive plasma have been tested to obtain a good piezoelectric material for SAW applications. Crystalline structures and morphological characteristics of the films were...
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