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Body contacted (BC) core logic/high speed (HS) and input/output (I/O) SOI PMOSFETs from 65 nm technology are shown to have higher degradation than the counterpart floating body (FB) devices under NBTI stress. It is also observed that concurrent HCI-NBTI (hot-carrier injection-negative bias temperature instability) leads to worst case degradation for the I/O and HS SOI p-channel MOSFETs. I/O PMOS devices...
In this review, the following reliability concerns: hot carrier reliability, negative-bias temperature instability (NBTI), time depended dielectric breakdown (TDDB) and electrostatic discharge, are discussed individually, and recognizing that the responsible mechanisms quite often are active simultaneously, their interdependence and interaction is also discussed
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