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In this paper we present simulation results obtained with our electro-thermal device simulator when modeling different technology generations of nano-scale fully depleted Silicon-on-Insulator (FD-SOI) devices. The electro-thermal simulator is based on a combined ensemble Monte Carlo device simulator coupled to moment expansion of the phonon Boltzmann transport equations. In particular, we stress out...
In this paper, we continue our investigations on self-heating effects in nanoscale fully depleted (FD) silicon-on-insulator (SOI) devices with emphasis on what is the appropriate simulation domain needed for accurate modeling. In that context, we examine the influence of the underlying substrate on the current degradation in the active channel region and what needs to be the proper boundary conditions...
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