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We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2 ??m-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The dependence of etching depth on etching time for the implantation at different ion fluences was investigated. Erosion of GaN surface was obvious with implantation at the fluence of 3??1016 cm-2. The experiment...
To improve the performances of ohmic contacts for GaN devices, a novel multilayer Ti/Al-based metal scheme (Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au) on undoped AlGaN/GaN heterostructures was employed. A contact with ??c (specific contact resistance) of 8.74E-07 ????cm2, Rc of 0.22 ????mm was demonstrated. Ohmic contacts with the novel metal structure were measured with I-V, SEM, HRTEM to show their properties...
The role of the former-Ti/Al ratio in the nanolayered ohmic contacts to GaN/AlGaN HEMT structures has been studied for three ratios: (30/70) wt.%, (50/50) wt.% and (70/30) wt.%. The dependence of the electrical properties and surface morphology on the initial contact composition and annealing conditions has been investigated. Lowest contact resistivity of 4.22times105 Omegacm2 has been achieved for...
We report on the use of mats of gold nanoparticle decorated GaN nanowires as gas sensors. The sensing was by the repeated and reversible measurement of changes in the current-voltage characteristics of the mat of nanowires. The nanowires had diameters of about 200 nm and were many microns long. The mat was grown on a 1-cm diameter sapphire disk and was about 10 thick. The selectivity mechanism is...
There have been enormous worldwide research efforts in semiconductor nanostructures in the last decade. The basic motivation behind the study of semiconductor nanostructures is that the quantum-confinement effect in such low dimensional systems allows devices with promising properties to be engineered. Ion irradiation is a promising tool for nano-patterning of semiconductor surface because of its...
The rapid thermal annealing effects on Ti/Al/Ni/Au Ohmic contact to n-Al0.45Ga0.55N are investigated by current-voltage (I-V) measurements and transmission line model (TLM). Experiment results indicated that with high Al fraction, it is easy to form ohmic contact to n-AlGaN. Our experiments show that the specific contact resistance (rhoc) depends on annealing temperature and time. The minimum of rho...
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