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Bias temperature instability has attracted a lot of attention as a dominant degradation mechanism in modern MOS transistors. Despite considerable effort, the exact physics behind this mechanisms are still controversial. We discuss some numerical aspects of our recently presented model which is capable of reproducing the main features of the phenomenon. Furthermore, we demonstrate how the model can...
Germanium pMOSFETs with silicon-passivated interface (Ge/Si/SiO2/HfO2) are investigated for negative bias temperature instability (NBTI). Even though a high initial interface state density is measured, the stack shows a robustness toward NBTI stress, and the 10 year lifetime is ensured with a gate voltage overdrive VG-Vth = -1.2 V.
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