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In this work, we present a detailed investigation of the electrical characteristics of 3D Gate-All-Around (GAA) Silicon nanowire (down to 6nm-diameter) SONOS memories compared to standard planar SONOS devices. In particular, by means of TCAD simulations, the write, erase and retention characteristics under uniform FN stress are explained and the main geometrical and electrostatic effects of 3D cylindrical...
Wafer thinning and formation of through-Si via (TSV) and metal microbump are key processes in 3D LSI fabrication. However, it might introduce mechanical stress and crystal defects in thinned wafers. In addition, Cu for TSV and microbump might introduce metal contamination in thinned Si substrate. Then the impact of mechanical stress and metal contamination in the thinned Si substrate has been investigated...
The impact of singularity points on stress distribution in piezoresistive module is investigated by means of FEM simulation. Strong influence of singularities on stress distribution in silicon-glass interface is presented in this paper.
Mechanical stress, crystal defects, and metal contamination in thinned silicon substrates with and without intrinsic gettering (IG) zone have been investigated for three-dimensional (3D) integration. The remnant stress existing after wafer thinning was evaluated using angle-(5deg) polished silicon wafers by micro-Raman spectroscopy (muRS). The metal contamination in the thinned silicon substrates...
Continuous increase in demand for product miniaturization, high package density, high performance and integration of different functional chips has lead to the development of three dimensional packaging technologies. Face-to-face silicon (Si) dies stacking is one of the three dimensional (3D) packaging technologies to form a high density module. In this work, a chip level stacked module was demonstrated...
Large thermal mismatch stress can be introduced in 3D-Integration structures employing Through-Silicon-Via (TSV). The stress distribution in silicon and interconnect is affected by the via diameter and layout geometry. The TSV induced stress changes silicon mobility and ultimately alters device performance. The mobility and performance change differs in nand p- silicon and is a function of the distance...
This work proposes reliability aware through silicon via (TSV) planning for the 3D stacked silicon integrated circuits (ICs). The 3D power distribution network is modeled and extracted in frequency domain which includes the impact of skin effect. The worst case power noise of the 3D power delivery networks (PDN) with local TSV failures resulting from fabrication process or circuit operation is identified...
We present here, for the first time, a method of introducing strain into Si, for example ultra-thin SOI, with a sacrificial strained GexSi1-x layers. Etching proximate trenches into the GexSi1-x-Si stack causes the stack to relax, transferring strain from the surface GexSi1-x into the buried Si. Filling the trenches locks the strain in place, where it remains after the GexSi1-x is removed. This method...
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