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Improvement of Laterally Diffused Metal Oxide Semiconductor (LDMOS) energy capability, Unclamped inductive switching (UIS) is used to characterize ruggedness in terms of the maximum avalanche energy that device can handle prior to destructive breakdown. Maximum amount of UIS energy (EAS) sustained by device before failure is evaluated and have linear relationship with number of device finger and device-width...
Optimizing the edge termination design around the periphery of active area is critically important for achieving the highest and stable breakdown voltage (BVdss) for any power devices. Active cell structures can be assumed as two dimensional (2-D) in the central part of the die, however as the active cells terminate to the termination regions at the periphery of the die, 2-D and 3-D transition regions...
In this paper, we present the implications that the Lightly Doped Drain-LDD technique used for Metal Oxide Semiconductor-MOS fabrication of n-channel transistor has on different device parameters. The discussion focuses on the influence of the n- doping of drain, respectively source on the electric field, one of the most important issues of today's technology, but takes also into consideration another...
The degradations of p-type lateral extended drain MOS transistors with thick gate oxide are experimentally investigated. A novel structure is proposed with a low doped boundary of the drift region without additional process, which will be helpful in reducing the electric field, reducing the degradations of electrical parameters correspondingly. The effects have been detailed analyzed by the CP measurements...
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