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La- and Mn-doped multiferroic BiFeO3 thin films were fabricated and characterized at radio- and microwave frequencies using the parallel-plate capacitor structures at a room temperature. A single phase epitaxial-quality thin films were grown by RF sputtering on SrTiO3(100) substrate with highly conductive SrRuO3 and Ti/Au layers used as bottom and top electrodes. In the frequency range 40 MHz - 30...
Ferroelectric thin films with compositions PbZr0.52Ti0.48O3 (PZT) have been processed by pulsed laser deposition on the SrRuO3(110)/YSZ(001)/Si(001) substrates. The obtained films are polycrystalline, with perovskite structure and the (110)-dominant orientation. The columnar structure was observed by cross-sectional scanning electron microscopy (SEM). The polarization hysteresis loops (P-E), capacitance-voltage...
This paper describes the experimental performance of a ferroelectric lumped element filter/switch grown on silicon substrate. The filtering/switching operation is based on the dc electric field controlled dielectric constant of a Ba0.25Sr0.75TiO3 (BST) thin-film. The switch is made by changing the cut-off frequency of a low-pass filter. 18 dB isolation has been demonstrated under 15 V bias at 25 GHz...
Lead magnesium niobate Pb(Mg1/3Nb2/3)O3 (abbreviated PMN) films is well known as a relaxor-based ferroelectric materials, which have attracted considerable attention for their applications including ferroelectric nonvolatile memory, capacitors, piezoelectric and pyroelectric devices due to polarization switching, high dielectric constant, excellent piezoelectric and pyroelectric properties. However,...
Combustion chemical vapor deposition (CCVD) has been used to grow a wide variety of ferroelectric thin films such as Ba1-xSrxTiO3 (BST) and PbZrxTi1-xO3 (PZT) on single crystal substrates. This paper presents the growth and characterization of epitaxial BST films on sapphire. Surface morphology, phase, and composition of the as -grown films were characterized. Planar gap capacitors were fabricated,...
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