The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Silicon carbide (SiC) power MOSFETs have been becoming a strong alternative to silicon (Si) technology in high-voltage, high-frequency, and high-temperature applications. Despite their growing market share, limited field information is available regarding the aging facts under thermal stress and long term reliability of discrete SiC MOSFETs. In this paper, discrete SiC devices are thermally aged through...
We have demonstrated 1200V and 3300V planar 4H-SiC MOSFET technology at our 6-inch foundry. 1200V MOSFETs demonstrate good avalanche ruggedness under single-and one million (1,000,000) repetitive unclamped inductive switching (UIS) pulse tests. 1200V MOSFETs can pass one hundred (100) 10 microsecond short-circuit events at 600V bus voltage, while 3300V MOSFETs can pass 5 microsecond short-circuit...
Experimental investigations on the gate-oxide and body-diode reliability of commercially available Silicon Carbide (SiC) MOSFETs from the second generation are performed. The body-diode conduction test is performed with a current density of 50 A/cm2 in order to determine if the body-diode of the MOSFETs is free from bipolar degradation. The second test is stressing the gate-oxide. A negative bias...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.