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Temperature and current density are two crucial factors in electromigration study. In order to investigate the effects of these two crucial factors deeply and separately. A temperature control device, employing forced convection with a constant direction, was adopted to control the chip temperature so that the chip temperature can be decoupled from the applied current density. With this temperature...
In this study, we examine the effects of void morphology and critical current density (jc) on the electromigration failure distributions of Cu/low-k dual damascene vias. Cu dual damascene vias exhibit multiple modes of electromigration-induced voiding and reliability is strongly dependent on the morphology of voids. We have developed a model of failure for DC and pulsed DC currents that allow prediction...
We examine the effects of void morphology and critical current density (jc) on the electromigration failure distributions of Cu/low-k dual-damascene vias. Cu dual-damascene vias exhibit multiple modes of electromigration-induced voiding, and reliability is strongly dependent on the morphology of voids. We have developed a model of failure for dc and pulsed dc currents that allows prediction of failure...
The Cu pillar is a thick under bump metallurgy (UBM) structure developed based on the consideration of alleviating current crowding in a flip-chip solder joint in operation conditions. We present in this work electromigration reliability and morphologies of Cu pillar flip-chip solder joints formed by joining Ti/Cu/Ni UBM with largely elongated Cu at ~62 mum onto Cu substrate pad metallization through...
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