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An advanced module structure for taking advantage of superior characteristics of Silicon Carbide (SiC) device was researched and developed. This structure can realize about four times of power rating density and one half of thermal impedance compared to that of conventional structure. Also, this structure achieved to have higher reliability by applying epoxy molding structure and copper pin connection...
In summary, high-voltage 3300 V, 30 A 4H-SiC DMOSFETs are demonstrated. The device can conduct over 30 A at a power dissipation of 200 W/cm2 in the on-state and block over 3300 V with a VGS of 0 V in the off-state. The devices exhibit normally-off characteristic. More data including dynamic switching performance of the DMOSFETs will be presented at the conference.
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