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A comprehensive evaluation of high-temperature (up to 200°C) on-state, blocking voltage and switching operation of 1200 V-class SiC Junction Transistors (SJTs) with on-chip integrated Schottky rectifiers is presented in this paper. The SJTs feature current gains of 69 and on-resistance of 6.3 mΩ-cm2 at room-temperature. The integrated free-wheeling Schottky rectifier displays a 0.9 V knee voltage...
This paper presents detailed design considerations of an ultra fast gate-drive circuit for 1.2 kV SiC JFET devices in phase-leg configuration using 0-Omega gate resistance. The proposed gate-drive achieved turn-on and turn-off times in the range of 12 to 55 ns operating from a 600 V dc bus with an inductive load of 10 A, and junction temperatures varying from 25deg to 200degC. An in-depth experimental...
This paper presents a strategy for the analytic determination of the dynamic switching behaviors of the SiC Diode- Si MOSFET basic cell. The approach employs the semiconductor device electrical parameters from data sheets and static characteristic measurements and testing conditions to determine the behaviors of the basic cell. The presented equations can explain the phenomenon of basic cell such...
Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottky diodes are still the only devices commercially available today. Though SiC Schottkys are now being...
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