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The mechanism of high mobility in <110>-directed nanowire pMOSFETs with height of 10nm on (100) SOI substrate is investigated. The 9nm-wide nanowire pFET has higher mobility than the (100) universal mobility at 300K The temperature dependence measurements of hole mobility show that the high mobility in nanowire pFET originates from the effect of (110) side surface of the nanowire. On the other...
On a 1.27-nm gate-oxide nMOSFET, we make a comprehensive study of interface roughness by combining temperature-dependent electron mobility measurement, sophisticated mobility simulation, and high-resolution transmission electron microscopy (TEM) measurement. Mobility measurement and simulation adequately extract the correlation length and roughness rms height ...
Density gradient quantum corrected 3D Monte Carlo simulation of electron inversion layer transport is carried out in the presence of a statistically accurate discrete rough surface. Surface roughness scattering is included in all simulations not through a scattering rate or boundary condition model, but through the direct propagation of carriers in the effective quantum potential associated with the...
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