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Poly-Silicon is widely used in semiconductor devices especially in TFTs technology. Performance of silicon thin film depends on the degree of crystallization. Enhancing the crystalline is the ultimate goal in this annealing process. The best annealing process will be identified. Initially Al doped Si film was prepared via PVD technique. Three different annealing processes were investigated. The first...
Metal-induced crystallization (MIC) of amorphous silicon-germanium (a-Si1-xGex) thin films at lower temperature is of considerable importance in photoelectric applications, such as, photovoltaic solar cells, thin film transistors (TFT), larger screen liquid crystal display (LCD), and so on. In this paper, bi-layer Al/a-Si1-xGex thin films on glass substrates were prepared by sputtering deposition,...
The aluminum-induced crystallization and layer exchange process shows great promise for converting a-Si into large-grained poly-Si for solar cell applications. To investigate the relationship between the grain size of Al and the final grain size of poly-Si, a series of samples were deposited by RF magnetron sputtering 165 nm of Al onto SiN/SiO2 coated (100) silicon substrates. The Al grain size was...
In our previous study, we fabricates large grain low temperature poly-crystalline silicon film by aluminum induced crystallization (AIC) method. The fabrication process is to deposite aluminum layer on top of the a-Si:H film deposited by plasma enhanced chemical vapor deposition (PECVD) [1]. In this paper, we discussed more about the effect of different aluminum thickness of the AIC process. Five...
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