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To improve the performances of ohmic contacts for GaN devices, a novel multilayer Ti/Al-based metal scheme (Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au) on undoped AlGaN/GaN heterostructures was employed. A contact with ??c (specific contact resistance) of 8.74E-07 ????cm2, Rc of 0.22 ????mm was demonstrated. Ohmic contacts with the novel metal structure were measured with I-V, SEM, HRTEM to show their properties...
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