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Solutions of the 2-D Schrödinger equation across the channel using a finite element method have been implemented into a 3-D finite element (FE) ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. The 2-D FE Schrödinger equation-based quantum corrections are entirely calibration free and can accurately describe quantum confinement effects in arbitrary device cross sections....
In this work, we investigate the Vth variability of Si- and Ge-channel FinFET with various surface orientations using analytical solution of Schrδdinger equation. The theoretical model provides us a physical and efficient method to explore the impact of quantum-confinement effect. In addition, to validate the results predicted by the theoretical model, we also perform the 3-D atomistic simulation...
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