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TID effects in the metal-insulator-semiconductor field-effect transistors (RADFETs) were experimentally investigated at the different chip temperatures by means of measurements the electrical characteristics before, during and after irradiations in wide range of gate voltages.
Degradation of InGaAs/InP and InGaAsP/InP Geiger-mode avalanche photodiodes caused by proton irradiation is studied for the first time. Substantial changes in the dark I-V characteristics as well as increases in the dark count rate are observed after irradiation. There are no systematic changes in photon count rate observed or in the amount of after-pulsing. The devices are rendered non-operational...
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