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Ge/Si heterostructure diodes based on n++Si(100)/i-Ge/p-Ge and p++Si(100)/i-Ge/n-Ge stacks and intrinsic region thickness of ~350 and ~900 nm, respectively, were fabricated using a specially developed synthesis protocol that allows unprecedented control of film microstructure, morphology, and purity at complementary metal-oxide-semiconductor compatible conditions. From a growth and doping perspective,...
We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.
We integrated monolithically vertical p-i-n Ge photodetectors with variable optical attenuators (VOAs) based on Si wire rib waveguides with a carrier injection structure. The fabricated Ge photodetectors have a low dark current of 60 nA and a high responsivity of 0.85 A/W at -1 V and accurately detect the change in light power due to the Si-VOA.
We demonstrate selectively grown Ge/Si avalanche photodetectors with a bandwidth of 10 GHz at gain = 8 at 1310 nm. The high bandwidth-gain-product of 80 GHz and Si monolithic integration capability offer great potentials for future applications.
Experimental results of Ge/Si heterojunction photodetectors of 2 GHz bandwidth operating at very low bias voltage and fabricated from epitaxial Ge grown on Si and SOI substrates by low-energy plasma-enhanced CVD are reported.
This paper is a summary of the performance results of three types of Ge on Si photodetectors, normal incident illuminated p-i-n detectors (NI-PD), waveguide p-i-n detectors (WG-PD) and avalanche photodetectors (APDs) operating over a wavelength range of 850-1550 nm.
Germanium-on-silicon photodetectors with responsivities as high as 0.85 A/W at 1550 nm that exhibit dark currents of 100 mA/cm2 and external efficiency up to 68% are demonstrated. Strain in the Ge film was determined to be 0.16%, reducing the optical bandgap by ~12 meV, resulting in a ~20 nm red shift at the absorption edge
We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85 A/W at 1.55 mum and 2 V reverse bias, and exhibit reverse dark currents of 100 mA/cm2 and external quantum efficiency up to 68%.
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