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Extreme ultraviolet (EUV) lithography has emerged as a promising candidate for the manufacturing of semiconductor devices at the sub-14nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. The success of EUV lithography for the high volume manufacturing of semiconductor devices depends on the availability of suitable resist with high resolution and sensitivity. It is well-known that...
The recent status of EUV resists is described based on experimental results using the small field exposure tool (SFET by EUVA/Canon) and full-field exposure tool (EUV1 by Nikon). Both exposure tools are linked to a coater/developer track system (Clean track ACT12 by Tokyo Electron) under a chemically controlled environment. The SFET, which was installed for the acceleration of the development of resist...
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