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Density function theory calculations provide the foundation for hierarchical modeling of the processes controlling fabrication of nanoscale devices. The roles of atomistic methods in nanotechnology modeling are described and examples of their application given. The resulting physical models provide both deeper insight into the processes controlling device fabrication, as well as tools for technology...
We report high performance (100) and (110) oriented single-grain TFTs below 600°C by orientation controlled μ-Czochralski process. Due to surface and in-plane orientation control, the uniformity approaches to the SOI counterpart. Electron mobilities are 732cm2/Vs for (100) and 630cm2/Vs for (110). Devices show stable performance under gate and drain stress respectively. After applying electrical stress...
Electron mobility enhancement using a top-cut stress liner and the replacement gate process is demonstrated and the concept of stress localization is proposed, for the first time. Eliminating a dummy gate after tensile stress liner formation enhances lateral stress at the channel region and achieves good mobility improvement. A detailed analysis using stress and mobility calculation based on a band...
For several decades, the output from semiconductor manufacturers has been high volume products with process optimisation being continued throughout the lifetime of the product to ensure a satisfactory yield. However, product lifetimes are continually shrinking to keep pace with market demands. Furthermore there is an increase in dasiafoundrypsila business where product volumes are low; consequently...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
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