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This paper concerns the design and the implementation of a transimpedance amplifier (TIA) dedicated to detector of Near Infrared spectroscopy (NIRS). To reduce the effect of the input capacitance on the bandwidth, a bias circuit with low input impedance is connected to input stage. A single ended common source common gate input stage based on a cascode structure is used to get a higher gain bandwidth...
This paper presents a new topology for wide band MMIC LNA. The proposed new architecture is based on a modification of the commonly used cascode cell. A 2-18 GHz MMIC LNA was designed and manufactured with the commercial PH15 UMS process. To our knowledge, the results obtained represent the new sate of art performance: the packaged die exhibits a 2.1 dB noise figure associated to a 25 dB gain and...
This paper discusses the design of a 60 GHz low noise amplifier (LNA) using a standard low power SOI CMOS process from ST Microelectronics. First, we outline the technology as well as the mm-wave design challenges. Using recent work on coplanar waveguide (CPW) modeling, we describe how it's possible to use parametric, 3D electromagnetic simulation to complete or replace analytical models of on-chip...
This paper presents two approaches to improve the performance of RF low noise amplifiers (LNAs). One approach is for noise enhancement and the other is for improving flatness of very wide range LNA. The techniques described here are based mainly on making some enhancement on capacitive cross-coupled LNA technique. LNAs have been designed in 130 nm CMOS process with 1.2 V power supply. Enhanced noise...
A high intercept points, cost-effective, and power-efficient switching FET double balanced mixer (DBM) is reported. The Switching FET DBM demonstrated in this work offers input intercept points (IIP3) and conversion loss typically 44 dBm and 8.5 dB respectively with 15 dBm LO power for the frequency band (RF: 900-2150 MHz, LO: 850-1950 MHz, IF: 50-200 MHz). The measured interport isolation is typically...
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