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We report the fabrication of a mechanically-flexible 16×16 array of thin-film, micron-size LEDs emitting at 480 nm. Devices were transfer-printed onto a mechanically-flexible ITO backplane using a modified, high-precision (placement accuracy ±25 nm) assembly system.
InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.
In this paper, the authors report an 8 times 8 active matrix light emitting diode (AMLED) array. The AMLED array is composed of 8 times 8 pixels, each of which has dimensions of 300 mum times 300 mum and a 50 mum pitch. A standard multiple quantum well (MQW) blue LED wafer grown on a sapphire substrate was used for fabrication of the LED micro array.
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