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In this paper, key aspects of silicon-carbide (SiC)-based automotive traction drives are reviewed. Firstly, the required supporting factors to achieve optimal operating conditions and best performance are described. Major component sizing methodologies and constraints are included. Expectations on gate threshold voltage, trans-conductance, and transient oscillation are discussed. Tolerance against...
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have the potential to increase the power density in power electronics converters compared to the currently used silicon (Si). Their benefits are higher efficiency, higher switching speeds, and higher operating temperatures. Moreover, SiC MOSFETs, which are normally-off, offer the possibility to directly replace Si Isolated-Gate-Bipolar-Transistors...
This paper describes the design, construction and performance of a 5 kVA aviation power module containing silicon carbide MOSFETs. The function and control of this module within a commercial aviation power electrical control unit (ECU) application is explained and the power dissipation benefits from the use of these MOSFETs instead of silicon IGBTs when driving an electrical motor controlling an aileron...
This paper investigates the physics of device failure during avalanche for 1.2 kV SiC MOSFETs, silicon MOSFETs and silicon IGBTs. The impact of ambient temperature, initial conditions of the device prior to avalanche breakdown and the avalanche duration is explored for the different technologies. Two types of tests were conducted namely (i) constant avalanche duration with different peak avalanche...
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