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This paper is to investigate correlation between doping technique towards diffusion rate and oxide growth rate. There are two types of doping technique that has been investigated such as Solid Source, SS and Spin on Dopant, SOD. Four inches wafers were used to investigate the effects of doping technique towards diffusion rate and oxidation rate. The resistivity of silicon substrate is measured by...
We applied partial conversion as initial silicidation to control the morphologies of Ni-Pt silicide, viz., the thickness, crystal grain, and Pt concentration of the Ni-Pt silicide. This partial conversion kept the thickness of Ni-Pt silicide constant regardless of the device pattern, i.e., by controlling silicidation with thermal diffusion. The key to partially converting Ni-Pt silicide was leaving...
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