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Here, we demonstrate an ultrasensitive olfactory system, namely, a bioelectronic nose (B-nose), based on CMOS-compatible silicon nanowires (SiNWs) conjugated with an odorant-binding protein (OBP). The SiNWs were low-cost and top-down fabricated with a conventional microfabrication process by using a novel controllable size-reduction process. The OBP-SiNW devices detect vapor analytes under ambient...
The dependence of nanowire width on the stiction-free structure and the influence of stiction on the electrical performance in the suspended nanowire (NW-SUS) ion-sensitive field-effect transistors (ISFETs) are investigated. The NW-SUS ISFETs without stiction are successfully fabricated using advanced microfabrication technology. The stiction-free NW-SUS ISFETs exhibit excellent electrical characteristics...
In this paper, a method to extract the signal-to-noise ratio (SNR) is proposed for the Si nanowire (Si-NW) biologically-active field-effect transistors (BioFETs). We have fabricated the devices using CMOS compatible process and demonstrated specific alpha fetoprotein (AFP) detection using the monoclonal antibody of AFP. The low-frequency noise was measured to calculate the parameter. Using our method,...
In this project, we employ a microcantilever based mechanical transduction DNA detection approach. We believe that the method to traduce and amplify signal has much wider implications for many binding assays in chemistry and biology, such as that in immunoassay. The core idea is to measure the bending and the stress of a microcantilever induced by DNA hybridization. A porous polysilicon cantilever...
We analyze the doping fluctuation induced stochastic performance variation in charge based Si nanowire (SiNW) biosensors. We show that for given doping statistics and system topology configuration, electrostatic biasing condition can be tuned to optimize overall sensor sensitivity. Systems that utilize NW arrays may achieve optimal sensitivity at different biasing condition than that for individual...
A field effect transistor (FET) sensor for pH detection was developed based on CMOS-compatible silicon nanowires. Optical lithography and anisotropic self-stop etching were employed to guarantee low cost and batch production for silicon nanowires. The pH nanosensor can detect the change of the hydrogen ion concentration effectively. In addition, it is demonstrated that the back gate electrode can...
Increasing the fraction of Ge in SiGe-on-Insulator (SGOI) using Ge condensation by oxidation significantly increases hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowire. However, our previous studies found that the sensitivity of an SGOI nanowire is degraded as the Ge fraction increases over 20%, because of the surface state of SiGe is unstable when the Ge fraction...
Because of the large surface-to-volume ratio of nano-structure, the silicon nanowires (SiNWs) provide a high sensitivity for highly sensitive detection of biological and chemical species. Moreover, the SiGe-on-Insulator (SGOI) by Ge-condensation process can enhance the mobility of hole carrier and then improve the nanowires's conductance. In this study, we discuss SiGe nanowire structural effect by...
Nanowire field-effect transistors (nano-FETs) are nano devices capable of highly sensitive, label-free sensing of molecules. However, significant variations in sensitivity across devices can result from poor control over device parameters, such as nanowire diameter and the number of electrode-bridging nanowires. This paper presents a fabrication approach that uses wafer-scale nanowire contact printing...
Biointerface between biological organisms and electronic devices has attracted a lot of attention since a biocompatible and functional interface can revolutionize medical applications of bioelectronics. Here, we used 3-aminopropyl trimethoxysilane (APTMS) self-assembled monolayer (SAM) to modify the surface of nanowire-based metal-oxide-semiconductor field-effect transistors (NW-MOSFETs) for pH sensing...
In order to prevent the risk of volatile organic solvent over exposure in the atmosphere, a sensitive sensing device is needed for detection in common workplaces. Silicon nanowires carrying the high surface-bulk ratio as a unique characteristic could be used for volatile organic solvent sensing. This study proposed to create the sensing device through spontaneous electrochemical reaction. In terms...
In this paper, we review a recently developed transformative nanowire FET sensor concept and 3D-compatible fabrication technology. Compared to the generic nanowire FET sensors, an intrinsic boost in detection sensitivity is accomplished through the seamless integration of a sensing nanowire with an amplifying nanowire FET. Exclusively enabled by top-down nanofabrication technology, the back-end-of-line...
The low level of output signal in conventional silicon nanowire field-effect transistors (FETs) could limit their potential deployments as integrated chemical and biomedical sensors. We have proposed in this work a novel T-shape channel nanowire FET with a built-in signal amplification mechanism. Compared to the co-fabricated, conventional silicon nanowire FET sensors, we have experimentally extracted...
This paper present the first measurements of chemically-gated axially-doped n+-p'-n+ silicon nanowire FETs and show stable and reproducible transfer characteristics in physiologically relevant buffer solutions (up to 100 mM KCl). The sensitivity of nanowire FETs having bare oxidized and chemically-functionalized surfaces to changes in pH was greatest when the devices were biased in the subthreshold...
In this work, we demonstrate a novel SU8/SiO2 /PMMA trilayer nanoimprint technique to fabricate the silicon nanowire (SiNW) sensor used for gas detection. The SiNW sensor fabricated in our experiment is based on the silicon on insulator (SOI) substrate which is doped by boron with a dopant concentration of 8 times 1017 cm-3. Two nanowire sensors with different linewidths as well as a thin-film plane...
In this paper, Si nanowire (NW) sensor in pH detection is presented. The conductance of device is analytically obtained and demonstrated the conductance increases with reducing the oxide thickness. To calculate the electrical conductance of sensor, the diffusion-drift model and nonlinear Poisson-Boltzmann equation are used. To improve the conductance a Si NW sensor with nanoscale side gate voltage...
The Si nanowire sensors with different geometries in the chemical detection are described. To analyze the sensor performance, the sensitivity of sensors with different cross sections including circular, rectangular, and trapezoidal are derived by two definitions. It is demonstrated that the sensitivity of Si nanowire sensors with different structures in the chemical detection is a function of geometrical...
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