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In this paper, the impact of self heating on the linearity of a drain modulated GaN HEMT power amplifier (PA) is studied. After characterizing the frequency response of junction temperature rise to power dissipation, as well as the effect of this variable on the PA modulation profiles, the dynamic envelope trajectory, under a two-tone test signal, appears to be slightly dependent on frequency spacing...
A class-AB power amplifier was designed for an envelope tracking (ET) application. Class-AB amplifier is widely used in wireless communication systems due to the compromise between linearity and efficiency. As a power device, Cree Gallium Nitride High Electron Mobility Transistor (GaN HEMT) CGH4010F was chosen. The input and output matching networks were designed and simulated with Advanced Design...
In this paper, the design, implementation, and experimental results of a high-efficiency wideband GaN-HEMT power amplifier are presented. A method based on source-pull/load-pull simulation has been used to find optimum source and load impedances across the bandwidth and then used with a systematic approach to design wideband matching networks. Large-signal measurement results show that, across 1.9-4...
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