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Channel hot-carrier (CHC) degradation in p-channel MOSFETs essentially includes negative bias temperature instabilities (NBTI), which would lead to over-estimate the CHC degradation. Therefore, a separation of the BTI component from CHC degradation is necessary to predict device lifetime more accurately. In this study, a simple lifetime prediction method separating NBTI and CHC component from sequential...
Channel hot-carrier (CHC) degradation becomes more critical as the channel length is reduced. In general, CHC degradation is evaluated using DC stress applying both gate and drain bias. However, in the case of p-channel MOSFETs, negative bias temperature instabilities (NBTI) also degrades threshold voltage (VTH) and saturation drain current (Isat) under DC stress applying gate bias. Therefore, CHC...
Characterizing interface states is a key task, and it typically takes seconds when conventional techniques, such as charge pumping (CP), are used. The stress-induced degradation can recover substantially during this time, and there is a need to improve the measurement speed. The central task of this work is to reduce the measurement time for interface states from seconds to microseconds to minimize...
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