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Lattice-matched (x =0.18) AlxIn1- xN epilayers were grown on GaN/ patterned sapphire substrate (PSS ) (0 0 0 1) and GaN/ unpatterned sapphire substrate (UPSS) (0 0 0 1) by metal-organic chemical vapor deposition (MOCVD). The quality of the grown AlInN epilayers on the PSS and UPSS were compared. Structural characteristics and surface morphology optical properties of the AlInN epilayers were investigated...
Indium oxide (In2O3) films were directly grown on (0001)-plane sapphire substrates by atomic layer deposition (ALD) using tri-methyl-indium (TMIn) and nitrous oxide (N2O). The structural, optical and transport properties of the In2O3 films were characterized by ??-to-2?? x-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM), Hall measurements, and transmission spectroscopy...
This paper reports the growth of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostructures by MOCVD for applications in optoelectronics. Field emission scanning electron microscopy, low temperature photoluminescence, room temperature microphotoluminescence and transmission electron microscopy are used to characterize the nanowires.
Specific features of rare-earth-oxides (PrOx, TbOx , Tm2O3, Gd2O3 and Eu 2O3) and Gd are employed to improve physical properties of InP layers. The InP layers were grown by liquid phase epitaxy (LPE) on (100)-oriented single crystal InP substrates with rare-earth element (RE) addition to the growth melt. The surface morphology and defect density was monitored by optical and scanning electron microscopy,...
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