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We present a physical analysis of the kink effect in InAs/AlSb High Electron Mobility Transistors (HEMTs) performed by means of a semiclassical 2D ensemble Monte Carlo simulator. InAs-channel HEMTs are very susceptible to suffer from impact ionization phenomena due to the small bandgap of InAs. These processes, jointly with the associated hole transport, are at the origin of the kink effect. When...
DC and RF properties are reported for InAs/AlSb HEMTs operating under cryogenic conditions (6 K) for a drain source bias up to 0.3 V. Compared to room temperature (300 K), a large improvement in device properties was observed: lower Ron, lower gds, a more distinct knee in the Ids (Vds) characteristics, increased fT and a reduction of the gate leakage current of more than two orders of magnitude. This...
In this paper, we present a first full set of characteristics (dc, fT, fmax, and noise) of InAs/AlSb high-electron mobility transistors (HEMTs) operating under cryogenic temperature and low-power conditions. Those results are systematically compared and deeply analyzed at room temperature and 77 K. The characteristics improvement achieved at 77 K open up the possibility to develop ultralow-power cryogenic...
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