The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Double-diffused metal-oxide-semiconductor n-channel power transistor devices were subjected to a high electric-field stress, gamma photons (60Co), and 10-MeV proton radiation, and were comparatively analyzed. The direct-current current-voltage and high-frequency capacitance-voltage techniques were used to characterize the two different regions under the gate oxide in this kind of devices. The Si-SiO...
We successfully reduced the parasitic resistance of nanowire transistors (NW Tr.) by raised S/D extensions with thin spacers (<;10nm). Id variations are suppressed by spacer thinning and parasitic capacitance increase is minimal. By adopting <;100> NW instead of <;110> NW, Ion = 1mA/μm for Ioff = 100nA/μm is achieved without stress techniques. Long-L mobility (μ) was systematically...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.