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The spin transfer torque magnetic random access (STT-MRAM) is suitable for embedded memories and also for the second level cache memory in the mobile CPU's. The most capable NVM component is STT-MRAM, which enhances the performance by 3.3 nS access time. It has strong radiation hardness, higher integrity and maximum endurance compared to SRAM. The power consumption of STT-MRAM is decreased by an order...
Low power consumption of high-speed memories such as cache memories will be realized by use of magnetic random access memory (MRAM). We have proposed the voltage-control spintronics memory (VoCSM) as a writing method. The VoCSM has a large operation margin because the current path in writing and the voltage path in reading are separated. The fabrication process we have employed is the two-step self-alignment...
In the upcoming internet of things (IoT) era, spin transfer torque magnetic tunnel junction (STT-MTJ) based non-volatile (NV) memory and circuits for IoT nodes and normally-off electronics will need to meet constraints in speed, energy and robustness. This study focuses on NV logic-in-memory (LIM) architecture. Supply voltage ($V_{dd}$ ) scaling in MTJ based NV-LIM is evaluated on FD-SOI 28 nm node...
This paper proposes a compact spin transfer torque non-volatile flip-flop (STT-NVFF) design. The proposed NVFF adds four transistors and two complementary magnetic tunnel junctions (MTJs) over a standard volatile flip-flop with only 18% area overhead. The NVFF utilizes a low power/ fast switching MTJ that permits the elimination of the write circuitry existing in conventional STT-NVFFs. The proposed...
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