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A reconfigurable Low Noise Amplifier works on the bands of 4.2–4.8GHz IMT-A and 3.4–3.6GHz UWB is presented in this paper. The proposed LNA is based on inductive source degenerated cascade structure while switched capacitors and switched circuit are added to realize the dual-band operation. The simulation results show that, in the band of 3.4–3.6GHz, the NF is lower than 2.3dB, the gain is higher...
In the paper, we propose a fully-differential current-reuse LNA with gm-boosting technique in CMOS 180 nm technology. Two amplification stages are connected in cascaded and share the same DC current. The first stage is a common-gate (CG) configuration for input and noise matching and the second stage is a common-source (CS) configuration for providing appropriate gain. Furthermore, the LNA combines...
In this paper feedback structure is adopted for DVB-H Low Noise Amplifier. Feedback network that comprise parallel RC provide satisfactory input matching. Circuit studies analytically and the result shows the feedback can improve LNA linearity and NF. LNA was simulated with TSMS CMOS 0.18μm BSIM3 model. In simulation it shows NF of 2.3dB, S11 better than −14db at the entire of the input band and third-order...
This article presents the design of a low area novel concurrent dual-band LNA operating in the GSM 0.9GHz/BLUETOOTH 2.4GHz communication standards. The concurrent LNA is designed and simulated in CADENCE using 130nm UMC technology. A conventional source degeneration inductor is eliminated for higher signal gain while providing reasonable input impedance. Also by adding a capacitor between the gate...
To adapt to the rapid development of multi-standard mobile communication, a low noise amplifier (LNA) that can operate at two frequencies of 800MHz and 1.8GHz respectively was designed. SiGe HBTs with good noise performance were used in the design. The Cascode circuit topology was adopted to reduce the Miller effect of the transistor. Inductor degeneration in emitter was introduced to decouple the...
One band switchable low noise amplifier (LNA) is designed for wideband applications. The proposed band switchable LNA has two switchable bands. The design consists of a input matching circuit, two cascode common-source amplifiers and an output buffer for measurement. The proposed LNA is designed with two switching capacitors as loading that use NMOS to make high quality factor. The proposed LNA gives...
A reconfigurable dual-band low noise amplifier (LNA) for 3.4-3.6 GHz IMT-Advanced and 4.2-4.8 GHz UWB systems is presented in this paper. Two different input matching networks with source-inductive-degeneration cascode configuration are used to switch at two different frequency bands. The parallel capacitors between the input MOSFETs' gate and source are used to optimize noise factor of the LNA. The...
A low-noise amplifier (LNA) employing novel self-biased shunt-feedback mechanism for X band applications is presented. The shunt-shunt feedback impedance is not only used to eliminate the use of gate-biased voltage, but also neutralize the miller capacitor of the input transistor. With combining current-reused technique into the amplifier, it is benefit to boost power gain and maintain low power consumption...
This paper discusses design of inductively source degenerated dual-band low noise amplifiers (LNA) in a standard CMOS 0.18 ??m process. The dual-band LNA can be tuned to either 1.8-GHz or 2.4-GHz. The LNA is implemented both by Miller capacitance tuning and by capacitor selection using switches. In both the designs, the parasitic effects of bond wire, bond pads and ESD protection circuits are considered...
The S parameter expression of the HBT with multiple feedbacks, especial the transmission gain S21, is presented and analyzed. Pure resistive feedback makes better input and output matching. Reactive feedback promotes the amplitude of S21 as the frequency increases, which compensates the inherent decrease of HBT's gain in high frequency. The gain decrease induced by the resistive feedback is also counteracted...
This paper provides the analytical background for the tunability in low noise amplifiers achieved by employing a pi-network where the series matching capacitor is assumed to be variable. The theoretical outcomes suggest that the choice of the tunable capacitor value will eventually result in a tradeoff between the noise figure (NF) and the input return ratio (S11). By pursuing a minimized noise figure...
When the matching inductors of low noise amplifiers (LNAs) are moved from off chip to on chip, their noise contribution cannot be neglected. This paper investigates the noise performance of an integrated source inductive degradation LNA, analyzes the noise contribution of its input matching inductors, and proposes a noise optimization method for the input matching network design of a power constrained...
This paper demonstrates a multi-band low noise amplifier (LNA) in 0.13 mum CMOS process, which is configurable with switching capacitor in 900 MHz, 1800 MHz, 2.4 GHz and 5.2 GHz bands. A dual-loop feedback technique is used to enhance the performance in noise figure, power gain and power consumption. The noise figures are 2.6 dB at 900 MHz, 2 dB at 1800 MHz, 2.1 dB at 2.4 GHz and 3.5 dB at 5.2 GHz;...
The matching methods for multiband operation are studied and analyzed. Then, switched inductor matching method is adopted because of its prominent characteristic about frequency selection. In switched inductor matching network, the optimizing techniques to minimize the insertion loss are studied and self-matched capacitor is proposed for easy flexible impedance and noise matching in various frequency...
A high intercept points, cost-effective, and power-efficient switching FET double balanced mixer (DBM) is reported. The Switching FET DBM demonstrated in this work offers input intercept points (IIP3) and conversion loss typically 44 dBm and 8.5 dB respectively with 15 dBm LO power for the frequency band (RF: 900-2150 MHz, LO: 850-1950 MHz, IF: 50-200 MHz). The measured interport isolation is typically...
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