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A planar bulk ZRAM is attractive from a simplicity, cost and scalability perspective - compared to SOI or FinFET based designs. Alternatively, the highly doped p-channel bulk planar ZRAM with electrostatic potential well- based hole-storage is susceptible to random- dopant-fluctuation (RDF) induced VT variability. Here, we propose and evaluate a planar bulk ZRAM device with an intrinsic channel of...
The performance and threshold-voltage variability of vertical SOI FinFETs are compared against those of planar fully depleted SOI MOSFETs with thin buried oxide, via three-dimensional device simulation with atomistic doping profiles and gate line-edge roughness, for the 22 nm CMOS technology node (25 nm gate length). Compact modeling is then used to estimate six-transistor SRAM cell performance metrics...
In this study, a three-dimensional ldquoatomisticrdquo coupled device-circuit simulation approach is advanced to investigate the process-variation-effect (PVE) and random dopant fluctuation (RDF) induced characteristic fluctuations in planar metal-oxide-semiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) from 65-nm to 16-nm gate length. Our preliminary results show that...
In this work, we have assessed the effects of intrinsic parameter fluctuations, WKF, PVE and RDF on electrical characteristics of nanoscale FinFETs' and circuits using an experimentally calibrated 3D coupled device-circuit analyzing technique. ??Vth for n- and p-type transistor are affected mostly by RDF, except for p-type planar MOSFETs, in which ??Vth is governed by WKF because of the larger deviation...
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