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In this work, the preparative conditions for optimizing growing carbon nanotube thin films on silicon wafers using an in-house chemical vapor deposition system was evaluated. We found that, when acetylene was used as the carbon source and nickel as the catalyst, the amount of carbon nanotubes grown on the silicon wafers was increased when the growth temperature was decreased from 800°C to 600°C. The...
Possibilities of applications Coherence Correlation Interferometry technique for topological studies of microporous materials on example C-Ni films deposited on porous silicon are discussed.
This paper is meant to be a general overview of recent advances in new processes and process tooling (implant and anneal) for advanced junction formation. Also included are details of impact of novel implant processes, such as cold implant and pre-amorphization (PAI) implants on Nickel Silicide (NiSi) formation. We will also discuss subtle impacts of wafer temperature during ion implantation on channel...
A novel approach exploiting the concept of NiSi:C/Si:C interface dipole engineering for electron barrier height ??BN reduction is demonstrated in strained n-FinFETs using S+ ion implant. The new approach is simple and promising for reducing contact resistance RCSD in advanced device architectures such as the FinFETs.
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
We report a novel contact technology comprising Selenium (Se) co-implantation and segregation to reduce Schottky barrier height PhiBn and contact resistance for n-FETs. Introducing Se at the silicide-semiconductor interface pins the Fermi level near the conduction band, and achieves a record low PhiBn of 0.1 eV on Si:C S/D stressors. Comparable sheet resistance and junction leakage are observed with...
Several nanoscale arrays of metallic, semiconductor, and organic carbon compounds (carbon nanopearls) have been fabricated on nanoporous flexible alumina and silicon templates based on a new self-assembly growth mode. They were obtained using pulsed laser deposition, thermal evaporation, e-beam evaporation, or RF magnetron sputtering. The different moieties that were observed include nanodomes and...
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