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Transverse optical confinement in zinc oxide (ZnO) random cavities on Si substrate is achieved by a self-generated zinc silicate (Zn2SiO4) layer formed between the interface of ZnO and Si after thermal annealing.
The 'hotter and faster' trend in rapid thermal processing (RTP) of semiconductors requires RTP equipment to be capable of reaching very high temperature along with very fast ramping and cooling rates. To fulfill the critical needs of the future RTP technology, LT technologies (LTT) has been developing a solid state, cavity-less and variable frequency based microwave technology capable of generating...
In this paper, ZnO nanorods were synthesized by the hydrothermal process on various substrates such as glass, ITO, p-type porous silicon and n-type porous silicon by dipping in ZnO solution and atomic layer deposition method. The thin films a grown on substrates were washed with deionized water to eliminate residual salts, dried in air, and annealed at 400 degC. Scanning electron microscopy and X-ray...
The aim of the work was to study the effect of postgrowth thermal annealing processes on the characteristics of the zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering. The growth temperature of the ZnO thin films was fixed at 230degC and then the samples were annealed in dry air atmosphere at 800degC for one hour. The surface of the ZnO samples was analyzed with a scanning...
The purpose of using high density nano-crystalline silicon embedded in insulator matrices is the energy confinement of Si based quantum dot nanostructures. This approach aims to engineer wide band gap Si materials to be used as upper cell elements in Si based tandem cells in order to increased efficiency and low cost thin film processes. One of the main challenges is to obtain sufficient carrier mobility...
SiC nanocrystals growth through the surface reaction between spin-on C60 dissolved in Carbon Disulphide (CS2) and Si substrate and 800degC (100 rains.) annealed has been investigated. Scanning Electron and Atomic Force Microscopy showed the crests of C60 clusters formed preferentially on the Si substrate steps with 40-60 nm cluster sizes. Silicon carbide nanocrystallite formation after anneal. has...
We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/ silicon rich hydrogenated amorphous silicon carbide (a-Si1-xCx) multilayers. Raman scattering spectroscopy and transmission electron microscope (TEM) measurement revealed that silicon quantum dots were formed in only a-Si1-x...
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