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In this work, a simple way of growing high quality ZnO nanowire on PS substrate by thermal evaporation technique without application of catalyst is discussed. The PS was generated by electrochemical anodization method using n-type Si (lOO)wafer. During electrochemical etching process, constant current density, J=25 m/cm has been applied in the electrolyte consisting of aqueous Hydro-fluoride acid,...
High quality ZnO films were obtained by thermal oxidation of Zn films on the temperature range from 300 to 700 °C. Zn films of 190 nm in thickness were deposited on silicon and glass substrates by the sputtering technique. Thermal oxidation was done at normal environment conditions. The complete oxidation of the Zn films was determined by the ZnO films transparency. The ZnO films resulted dense with...
Zinc oxide (ZnO) is an emerging optoelectronic material in large area electronic applications due to its various functional behaviors. We present the fabrication and characterizations of ZnO nanostructures. The ZnO nanostructures consisting of nanorods were synthesized using sol-gel hydrothermal technique on oxidized silicon (Si) substrates. In the fabrication of ZnO nanorods, the oxidized Si substrates...
ZnO single-crystal hexagonal microtubes were controllably fabricated by hydrothermal process. The ZnO microtubes were characterized by scanning electron microscopy, x-ray diffraction and high-resolution transmission electron microscopy. The results show that the as-prepared ZnO microtubes are hexagonal and single crystal in nature and grow on Si (111) substrates along the [0002] direction. SEM images...
In this paper, ZnO thin films were deposited on SiO2/Si (100) substrates by radio frequency magnetron sputtering using high purity (99.999%) ZnO target, grown time was 2 h, 4 h and 8 h respectively. After annealing in pure oxygen atmosphere, high-quality ZnO thin film was obtained. X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) were employed to characterize the quality of the films...
In this paper, ZnO nanorods were synthesized by the hydrothermal process on various substrates such as glass, ITO, p-type porous silicon and n-type porous silicon by dipping in ZnO solution and atomic layer deposition method. The thin films a grown on substrates were washed with deionized water to eliminate residual salts, dried in air, and annealed at 400 degC. Scanning electron microscopy and X-ray...
Inductive heating method was used to synthesis regular tetrapod-like zinc oxide within 1 minute in the air. The synthesis of the nanostructure was interpreted by the Vapor-Solid (VS) growth mechanism. The nanostructure was verified to be pure ZnO nanostructure by X-ray diffraction (XRD) spectrum. Field emission measurement was applied to prove that it owns low turn-on field and large emission current...
The aim of the work was to study the effect of postgrowth thermal annealing processes on the characteristics of the zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering. The growth temperature of the ZnO thin films was fixed at 230degC and then the samples were annealed in dry air atmosphere at 800degC for one hour. The surface of the ZnO samples was analyzed with a scanning...
ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties...
The optical and electrical characteristics of zinc oxide (ZnO) films grown by molecular-beam epitaxy (MBE) on Si substrates were investigated. ZnO epitaxial layer was successfully grown on nitridated Si(100) substrate initially covered with high-temperature GaN and low-temperature ZnO double buffer layers using MBE. X-ray diffraction and photoluminescence results both indicated that a reasonable quality...
A miniature SAW device is designed and fabricated at 1 GHz for wireless communication system. A 5 mum thin film of ZnO is successfully deposited using RF sputtering technique on PECVD SiO2 layer of 1 mum on top of Si wafer under various operating conditions. The c-axis oriented ZnO film exhibit a sharp diffraction peak corresponding to the (002) reflection at 2thetas=34.42. The fabrication process...
ZnO films have been synthesized on Si(111) substrates at 650 degC by pulsed laser deposition (PLD). ZnO homo-buffer layers deposited at a low temperature of 500 degC under oxygen pressures between 15 and 60 Pa were employed for the growth. Influence of the buffer layer on the properties of ZnO films was investigated. The results of X-ray diffraction (XRD) and reflection high-energy electron diffraction...
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