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This paper proposes a novel hybrid CMOS-CNFET bandgap reference circuit consisting of a CMOS bandgap core and a CNFET error amplifier. Both CMOS and CNFET circuits are based on 32nm technology node. Resulting hybrid topology utilizes resistive subdivision method and low threshold CNFET devices to lower the common mode input voltage of the error amplifier. The proposed bandgap reference achieves temperature...
A stable reference voltage (or current) source is a standard component of today's microelectronics systems. In particle physics experiments such reference is needed in spite of harsh ionizing radiation conditions, i.e. doses exceeding 100 Mrads and fluences above 1e15 n/cm2. After such radiation load a bandgap reference using standard p-n junction of bipolar transistor does not work properly. Instead...
This brief presents a temperature sensor operating over a wide temperature range from 25°C to 225°C for oil well instrumentation applications. The temperature sensor is implemented with a simple time-domain architecture and a mapping function at the digital back end. The mapping function eliminates the need for a band-gap reference, whose temperature coefficient deteriorates the accuracy, particularly...
A low power, low temperature coefficient and ultra-stable higher order curvature compensated CMOS voltage reference circuit has been designed for use in energy harvesting applications. The circuit can provide a stable reference of 543 mV over a wide supply voltage range from 0.69V to 2.5 V with a line sensitivity of 0.05% / V. The circuit has been designed in 65 nm DTCMOS process. The novelty is the...
Accurate voltage references are key building blocks for almost all electronic systems. Specifically, fuel gauge applications benefit from very high precision references to allow for extremely precise measurement of battery voltage and current in order to provide an accurate measurement of the state of charge of the battery.
This paper presents the design of a BJT-based remote temperature sensor to measure ambient temperature in different locations. The sensor chip supplies a calibrated current to the external devices, which are common off-the-shelf bipolar junction transistors — 2N3904 (NPN) and 2N3906 (PNP), and converts their base-emitter voltages to temperature using a 13-bit charge-balancing ΣΔ modulator. Dynamic...
This paper covers the development and testing of a high temperature electronics platform for integration with sensor elements to provide digital outputs that can be utilized by the FADEC (Full Authority Digital Electronic Control) system or the EHMS (Engine Health Monitoring System) on an aircraft engine. The developed system includes a reference voltage generator, biasing circuit, signal conditioning...
This paper presents a novel current reference circuit with negative feedback loop for biomedical neural current stimulator using the mutual compensation of threshold voltage and mobility. The negative feedback loop in this circuit effectively reduces the sensitivity both to the process and temperature variations. The nominal current output is designed to be 4 μA, and the temperature coefficient is...
In this paper, we present a temperature compensation method dedicated to a CMOS logarithmic image sensor with doubled output voltage swing. In this method, we use the principle of CMOS Bandgap Voltage Reference technique. This proposed temperature compensation method is adapted for all photocurrent values. As Bandgap Voltage Reference technique, the compensation circuit generates VPTAT1 and VPTAT2...
A low power voltage reference is implemented in a standard 0.18 μm CMOS process. The temperature coefficient (TC) of 7 ppm/°C is achieved in virtue of the output stage which consists of two transistors operating in subthreshold region and saturation region respectively. This kind of output stage is used to adjust the output voltage and compensate the curvature. The line sensitivity is 200 ppm/V in...
A novel voltage reference based on Kujik bandgap is proposed in this paper. An extra amplifier and bipolar are used to produce a current of positive temperature coefficient, which is for compensating the Kujik bandgap reference in high temperature. The reference finally has a temperature coefficient of only 10 ppm/°C. A negative feedback loop is introduced to provide a pre-regulated power supply for...
This paper presents a voltage reference that utilizes the virtually diode-connected MOS transistors, biased in the weak-inversion region. The proposed architecture increases the gain of the feedback loop that consequently reduces the system sensitivity, and hence improves the PSRR. The circuit is designed and simulated in a standard 0.18 μm CMOS technology. The simulation results in HSPICE indicate...
A modified circuit topology for bandgap references capable of providing very high load current with output which has small sensitivity against temperature variations is presented. Employing a proportional-to-absolute-temperature (PTAT) current source and a complementary-to-absolute-temperature (CTAT) voltage source in a novel closed-loop configuration, the output voltage can be tuned over a wide range...
In this paper, a high-precision and low temperature coefficient CMOS band gap voltage reference source is presented. Prototype of the circuit is simulated using charted 0.35-μm CMOS process. The power supply is 2.5 V. The output voltage reference exhibits 915.4±0.15 mV variation when the supply changes from 2.0 V to 3.0 V at room temperature. The power dissipation is less than 0.2 mW at 2.5 V supply...
A new low voltage bandgap voltage reference circuit topology is proposed and analyzed and simulation results are presented in this paper. The conventional topologies for low voltage bandgap reference applications require an Op-Amp as the feedback amplifier. The new topology utilizes a self-biasing transresistance amplifier structure with a reduced current consumption for this purpose. Two circuit...
A new voltage reference with output dependent upon the threshold voltage of an NMOS transistor is introduced. A low temperature coefficient is achieved by using a pn-junction PTAT current generator to compensate for the negative temperature coefficient of the threshold voltage. Implemented in a standard 0.6mum CMOS process with an output of 1.67V, it has a temperature coefficient of 4.9ppm/degC over...
A novel low power temperature sensor of strong power supply variation rejection ability for passive RFID tags is presented. As a resource reuse method adopting by the proposed temperature sensor, it has lower power consumption and stronger power supply variation rejection ability than the conventional temperature sensor. The sensor features a low power consumption of 3 ??W, while the maximum error...
In this paper, an accurate temperature sensor was implemented using 0.18 mum CMOS technology. The temperature sensor which was designed with the bandgap reference circuit is calibrated by trimming common mode voltage of an operational amplifier. The temperature sensor can compensate for other blocks of the IC chip above the special temperature when the ADC was a power off for low power operation....
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